2020611 · Since the breakthrough of graphene, 2D materials have engrossed tremendous research attention due to their extraordinary properties and potential applications in electronic and optoelectronic devices. The high carrier mobility in the semiconducting material is critical to guarantee a high switching speed and low power …
view more5 · The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities. Doping with isovalent and larger-sized alkali ...
view more1989223 · The charge carriers in all of the well-known layered copper oxide high-temperature superconductors1– are holes located in the CuO2planes, the common structural element of these systems. Recently ...
view more201617 · In the two experimental cases of figure 3 (central and right panel), by considering the value of the Fermi momentum k F (the difference between the K point and the Dirac cone branch crossing the Fermi level) we calculated a charge carrier density of about 7 × 10 12 and 5 × 10 13 cm −2, respectively, being n = k F 2 /π ; knowing the …
view more2017718 · Using trap-limited conduction theory, μ 0,TLC can be defined by the product of μ 0 and β TLC which is the ratio of free carrier concentration (p free) to the total carrier concentration (i.e. p ...
view more20221026 · Electrical properties. Figure 1c shows the hole concentration (N) dependent hole mobility (μ) and the resistivity (ρ) of CuI thin films with different treatments.The as-grown CuI thin film ...
view more2024329 · Copper-rich sulfides are very promising for energy conversion applications due to their environmental compatibility, cost effectiveness, and earth abundance. Based on a comparative analysis of the structural and transport properties of Cu3BiS3 with those of tetrahedrite (Cu12Sb4S13) and other Cu-rich sulfides, we highlight the role of the cationic …
view more201311 · Abstract. The physics of cuprous oxide (Cu2 O) is reviewed with respect to structural, optical, and electrical properties. New experimental findings are included especially in the context of theoretical band-structure calculations. Intrinsic defects related to nonstoichiometry are made responsible for the p-type conduction.
view more20231027 · Copper Zinc Tin Sulphide (CZTS) is a propitious semiconductor for active absorber material in thin-film solar cells (SCs). ... As we increase the doping concentration, charge carrier separation is ...
view more201311 · The hole carrier densities versus oxygen flow are shown in Fig. 6.8, and the existence ranges of the three copper oxide compounds are shown in shaded areas in Fig. 6.8. For Cu 2 O, carrier densities start around 10 15 cm − 3 and increase up to 10 19 cm − 3; for Cu 4 O 3, a similar trend is observed.
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